A process monitor according to claim 2 wherein said ring oscillator includes: Terminal means fabricated integrally with said complementary-metal-oxide semiconductor integrated circuit for facilitating coupling said ring oscillator to the general purpose computer to permit said general purpose computer to sense pulses generated by said ring oscillator and for computing a process factor indicative of the electrical characteristics of the ring oscillator and the integrated circuit.ģ. In combination with a general purpose computer including a display monitor for visually observing process factors calculated by the computer, a process monitor comprising:Ī complementary-metal-oxide semiconductor integrated circuit having PMOS circuit elements and NMOS circuit elements Ī ring oscillator fabricated integrally with said complementary-metal-oxide semiconductor integrated circuit, said ring oscillator including PMOS circuit elements and NMOS circuit elements having substantially the same electrical characteristics as the PMOS circuit elements and the NMOS circuit elements of said integrated circuit and Said process factor being a predetermined function of a parameter of said sensed pulses that varies in accordance with relative electrical characteristics of the PMOS circuit elements and the NMOS elements.Ģ. Terminal means formed on said substrate for facilitating coupling said ring oscillator to external processor means for sensing pulses generated by said ring oscillator and for computing a process factor having substantially the same desired process factor of said logic circuit means Said high sensitivity test circuit means including a process monitor for a complementary-metal-oxide semiconductor integrated circuit having:Ī ring oscillator formed on said substrate having PMOS circuit elements and NMOS circuit elements and High sensitivity test circuit means formed on said substrate for facilitating the fabrication of said logic circuit means having a desired process factor Low sensitivity test circuit means formed on said substrate for facilitating the fabrication of logic circuit means having a desired process factor A complementary-metal-oxide semiconductor integrated circuit comprising:
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